Electron-beam lithography with the scanning tunneling microscope

IO nm electron beam lithography and sub-50 nm overlay using a modified scanning electron microscope

Gratings of 10 nm wide metal lines 30 nm apart, and quantum transistor gates with 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substrates using a modified scanning electron microscope operated at 35 keV and liftoff of Ni/Au. Furthermore, multilevel electron beam lithography with a standard deviation (30) of an overlay accuracy (30 dev...

the scanning electron microscope

it is only thirteen years since the scanning electron microscope has been available commercially. yet, even in this short period of time, this instrument has been a powerful tool in the investigation of topography, electrical and magnetic properties, crystal structure, cathodoluminescent characteristics etc. of solid specimens. today, this type of microscope has opened its place alongside the c...

Simulating Scanning Tunneling Microscope

Limiting factors in sub-10 nm scanning-electron-beam lithography

Achieving the highest possible resolution using scanning-electron-beam lithography SEBL has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications F. S. Bates and G. H. Fredrickson, Annu. Rev. Phys. Chem. 41, 525 1990 ; Black et al., IBM J. Res. Dev. 51, 605 2007 ; Yang et al., J. Chem. Phys. 116, 5892 2002 have driven demand for feature sizes ...

Achieving sub-10-nm resolution using scanning electron beam lithography

Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications have driven demand for feature sizes well into the sub-10-nm domain. While SEBL has the highest resolution of nearly any conventional patterning technique available, reliably defining features at t...